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SHD114 A2030 2010B SGM2008 15ADR C2000 200BG ENA1315A
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  Datasheet File OCR Text:
 30 10V 25 20 6V 5V 4.5V
20 16 12 8 125C Vgs=3V 4 25C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds (Volts) Fig 1: On-Region Characteristics Vgs (Volts) Figure 2: Transfer Characteristics Vds=5V
4V
Id (A)
15 3.5V 10 5 0
Id (A)
60
1.6
Normalized On-Resistance
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8
50
Id=5A
Vgs=10V
Rds(on) (m:)
40 30 20 10 0 5
Vgs=4.5V
Vgs=4.5V
Vgs=10V
10
15
20
0
50
100
150
200
Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature
70 60
1.0E+01
Id=5A
Is Amps
1.0E+00 1.0E-01 1.0E-02 125C 1.0E-03 25C
Rds(on) (m:)
50 40 30 125C
1.0E-04 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-05 0.0 0.2 0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body diode characteristics
10 8
1000 Vds=15V Id=6.9A 900 800 f=1MHz Vgs=0V
Capacitance (pF)
700 600 500 400 300 200 100 Crss 0 5 10 15 20 25 30 Coss Ciss
Vgs (Volts)
6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics
0 Vds (Volts) Figure 8: Capacitance Characteristics
100 Rds(on) limited
Tj(max)=150C Ta=25C 1ms 10ms 0.1s 100Ps 10Ps
40 Tj(max)=150C Ta=25C 30
Id (Amps)
10
Power W
1s 10s DC
20
1
10
0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse T 0.01 0.1 1 10 100 1000
0.01 0.00001
0.0001
0.001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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